FQU3N60CTU

new-10%

Manufacturer part number:FQU3N60CTU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 2.4A IPAK

Case Package:SOT-23

Datasheet:FQU3N60CTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 19 hours ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	QFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	2.4A
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.4 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	565pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.4A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2.4A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free