FSB560 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FSB560 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
2A
Frequency
75MHz
Base Part Number
FSB560
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Gain Bandwidth Product
75MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
350mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
940μm
Length
2.92mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.11026
$0.33078
FSB560 Product Details
FSB560 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.When VCE saturation is 350mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.75MHz is present in the transition frequency.This device can take an input voltage of 60V volts before it breaks down.During maximum operation, collector current can be as low as 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of 350mV the vce saturation(Max) is 350mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor FSB560 applications of single BJT transistors.