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2SB1710TL

2SB1710TL

2SB1710TL

ROHM Semiconductor

2SB1710TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SB1710TL Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1710
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 320MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 30V
Max Frequency 100MHz
Transition Frequency 320MHz
Collector Emitter Saturation Voltage -150mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -6V
hFE Min 270
Continuous Collector Current -1A
Height 950μm
Length 3mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.231282 $0.231282
10 $0.218190 $2.1819
100 $0.205840 $20.584
500 $0.194189 $97.0945
1000 $0.183197 $183.197
2SB1710TL Product Details

2SB1710TL Overview


This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 25mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.There is a transition frequency of 320MHz in the part.The breakdown input voltage is 30V volts.The maximum collector current is 1A volts.

2SB1710TL Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 320MHz

2SB1710TL Applications


There are a lot of ROHM Semiconductor 2SB1710TL applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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