2SB1710TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1710TL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1710
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
320MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
30V
Max Frequency
100MHz
Transition Frequency
320MHz
Collector Emitter Saturation Voltage
-150mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-6V
hFE Min
270
Continuous Collector Current
-1A
Height
950μm
Length
3mm
Width
1.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.231282
$0.231282
10
$0.218190
$2.1819
100
$0.205840
$20.584
500
$0.194189
$97.0945
1000
$0.183197
$183.197
2SB1710TL Product Details
2SB1710TL Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 25mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.There is a transition frequency of 320MHz in the part.The breakdown input voltage is 30V volts.The maximum collector current is 1A volts.
2SB1710TL Features
the DC current gain for this device is 270 @ 100mA 2V a collector emitter saturation voltage of -150mV the vce saturation(Max) is 350mV @ 25mA, 500mA the emitter base voltage is kept at -6V the current rating of this device is -1A a transition frequency of 320MHz
2SB1710TL Applications
There are a lot of ROHM Semiconductor 2SB1710TL applications of single BJT transistors.