FZT3019 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FZT3019 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 13 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1A
Frequency
100MHz
Base Part Number
FZT3019
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
hFE Min
100
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.12466
$0.49864
8,000
$0.11748
$0.93984
12,000
$0.11030
$1.3236
28,000
$0.10192
$2.85376
FZT3019 Product Details
FZT3019 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.A collector emitter saturation voltage of 500mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.In extreme cases, the collector current can be as low as 1A volts.
FZT3019 Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 7V the current rating of this device is 1A a transition frequency of 100MHz
FZT3019 Applications
There are a lot of ON Semiconductor FZT3019 applications of single BJT transistors.