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FZT3019

FZT3019

FZT3019

ON Semiconductor

FZT3019 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FZT3019 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 13 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 188mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1A
Frequency 100MHz
Base Part Number FZT3019
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.12466 $0.49864
8,000 $0.11748 $0.93984
12,000 $0.11030 $1.3236
28,000 $0.10192 $2.85376
FZT3019 Product Details

FZT3019 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.A collector emitter saturation voltage of 500mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 100MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.In extreme cases, the collector current can be as low as 1A volts.

FZT3019 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 100MHz

FZT3019 Applications


There are a lot of ON Semiconductor FZT3019 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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