Welcome to Hotenda.com Online Store!

logo
userjoin
Home

HGT1S20N36G3VL

HGT1S20N36G3VL

HGT1S20N36G3VL

ON Semiconductor

HGT1S20N36G3VL datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGT1S20N36G3VL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 360V
Max Power Dissipation 150W
Current Rating 20A
Element Configuration Single
Power Dissipation 150W
Input Type Logic
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 37.7A
Collector Emitter Breakdown Voltage 395V
Collector Emitter Saturation Voltage 1.3V
Test Condition 300V, 10A, 25 Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 5V, 20A
Gate Charge 28.7nC
Td (on/off) @ 25°C -/15μs
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.914560 $9.91456
10 $9.353358 $93.53358
100 $8.823923 $882.3923
500 $8.324456 $4162.228
1000 $7.853260 $7853.26
HGT1S20N36G3VL Product Details

HGT1S20N36G3VL  Description

This  N-Channel  IGBT  is a  MOS  gated, logic-level device that is intended to be used as an ignition coil driver in automotive ignition circuits.  Unique features include an active voltage clamp between the collector and the gate which provides  Self  Clamped  InductiveSwitching  (SCIS)  capability in ignition circuits.  Internal diodes provide ESD  protection for the logic level gate.  Both a  series resistor and a shunt resistor are provided in the gate circuit.



HGT1S20N36G3VL  Features

Logic Level Gate Drive

Internal Voltage Clamp

ESD Gate Protection

Tj= 175°C

Ignition Energy Capable


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News