HGTP10N120BN

new-10%

Manufacturer part number:HGTP10N120BN

Manufacturer:ON Semiconductor

Description:HGTP10N120BN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTP10N120BN Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	44 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	49.2W
Current Rating	35A
Number of Elements	1
Element Configuration	Single
Power Dissipation	298W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	35A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.45V
Max Breakdown Voltage	300V
Turn On Time	32 ns
Test Condition	960V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Continuous Collector Current	35A
Turn Off Time-Nom (toff)	330 ns
IGBT Type	NPT
Gate Charge	100nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	23ns/165ns
Switching Energy	320μJ (on), 800μJ (off)
Height	9.4mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free