HGTG20N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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HGTG20N60A4D Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
290W
Current Rating
70A
Base Part Number
HGTG20N60
Number of Elements
1
Element Configuration
Single
Power Dissipation
290W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
15 ns
Transistor Application
POWER CONTROL
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
73 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
70A
Reverse Recovery Time
35 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Max Breakdown Voltage
600V
Turn On Time
28 ns
Test Condition
390V, 20A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 20A
Turn Off Time-Nom (toff)
160 ns
Gate Charge
142nC
Current - Collector Pulsed (Icm)
280A
Td (on/off) @ 25°C
15ns/73ns
Switching Energy
105μJ (on), 150μJ (off)
Height
20.82mm
Length
15.87mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$30.045351
$30.045351
10
$28.344671
$283.44671
100
$26.740256
$2674.0256
500
$25.226656
$12613.328
1000
$23.798733
$23798.733
HGTG20N60A4D Product Details
HGTG20N60A4D Description
HGTG20N60A4D, provided by ON Semiconductor, is a type of N-channel IGBT with an anti-parallel hyperfast diode combining the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. It is optimized for high-frequency switch-mode power supplies, low conduction loss, and lower on-state voltage drop, as a result, it is well suited for various high-voltage switching applications operating at high frequencies.
HGTG20N60A4D Features
Anti-parallel hyperfast diode
Low conduction loss
Lower on-state voltage drop
High input impedance
HGTG20N60A4D Applications
Available in the TO-247 package
HGTG20N60A4D Applications
High-voltage switching applications operating at high frequencies
