IRFZ30PBF

new-10%

Manufacturer part number:IRFZ30PBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 50V 30A TO-220AB

Case Package:SOT-23

Datasheet:IRFZ30PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	50mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	74W Tc
Element Configuration	Single
Power Dissipation	75W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	50mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	50V
Input Capacitance	1.6nF
Drain to Source Resistance	50mOhm
Rds On Max	50 mΩ
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free