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HUF75637P3

HUF75637P3

HUF75637P3

ON Semiconductor

MOSFET N-CH 100V 44A TO-220AB

SOT-23

HUF75637P3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 44A
Power Dissipation-Max 155W Tc
Element Configuration Single
Power Dissipation 155W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 108nC @ 20V
Rise Time 75ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 61 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.7nF
Drain to Source Resistance 30mOhm
Rds On Max 30 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.628777 $3.628777
10 $3.423375 $34.23375
100 $3.229599 $322.9599
500 $3.046792 $1523.396
1000 $2.874331 $2874.331

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