IRFD9120

new-10%

Manufacturer part number:IRFD9120

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 100V 1A 4-DIP

Case Package:SOT-23

Datasheet:IRFD9120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.3W Ta
Power Dissipation	1.3W
Turn On Delay Time	9.6 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	29ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Input Capacitance	390pF
Drain to Source Resistance	600mOhm
Rds On Max	600 mΩ
Nominal Vgs	-4 V
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	Non-RoHS Compliant