HUFA75639S3ST

new-10%

Manufacturer part number:HUFA75639S3ST

Manufacturer:ON Semiconductor

Description:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm

Case Package:SOT-23

Datasheet:HUFA75639S3ST Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	Automotive, AEC-Q101, UltraFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	56A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 56A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	100V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free