T2N7002AK,LM

new-10%

Manufacturer part number:T2N7002AK,LM

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 60V 0.2A

Case Package:SOT-23

Datasheet:T2N7002AK,LM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
Series	U-MOSVII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	320mW Ta
Power Dissipation	320mW
Turn On Delay Time	2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	17pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	7 ns
Continuous Drain Current (ID)	200mA
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	17pF
Max Junction Temperature (Tj)	150°C
Drain to Source Resistance	2.8Ohm
Rds On Max	3.9 Ω
Height	1.1mm
RoHS Status	RoHS Compliant