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HUFA76639S3S

HUFA76639S3S

HUFA76639S3S

ON Semiconductor

MOSFET N-CH 100V 50A D2PAK

SOT-23

HUFA76639S3S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series UltraFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 50A
Power Dissipation-Max 180W Tc
Element Configuration Single
Power Dissipation 180W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 151 ns
Continuous Drain Current (ID) 51A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Input Capacitance 2.4nF
Drain to Source Resistance 23mOhm
Rds On Max 26 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

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