IRF540A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRF540A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Resistance
52mOhm
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
107W Tc
Element Configuration
Single
Power Dissipation
107W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
52m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 25V
Current - Continuous Drain (Id) @ 25°C
28A Tc
Gate Charge (Qg) (Max) @ Vgs
78nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
56 ns
Turn-Off Delay Time
90 ns
Continuous Drain Current (ID)
28A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Nominal Vgs
4 V
Width
10.67mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRF540A Product Details
IRF540A Description
Power MOSFETIRF540A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as VmurMOSFET.VFET.