SI5401DC-T1-GE3

new-10%

Manufacturer part number:SI5401DC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 5.2A 1206-8

Case Package:SOT-23

Datasheet:SI5401DC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	32mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Power Dissipation	1.3W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	32mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.2A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Turn-Off Delay Time	115 ns
Continuous Drain Current (ID)	5.2A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	32mOhm
Rds On Max	32 mΩ
RoHS Status	ROHS3 Compliant