IRF740B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRF740B Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Voltage
400V
Power Dissipation-Max
134W Tc
Element Configuration
Single
Current
10A
Power Dissipation
134W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
540mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Rise Time
80ns
Drain to Source Voltage (Vdss)
400V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
85 ns
Turn-Off Delay Time
125 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
400V
Input Capacitance
1.8nF
Drain to Source Resistance
430mOhm
Rds On Max
540 mΩ
Nominal Vgs
4 V
REACH SVHC
Unknown
RoHS Status
RoHS Compliant
IRF740B Product Details
IRF740B Description
These N-channel enhanced mode power field effect transistors IRF740B are produced using rairchiid's proprietary planar DMOS technology.This advanced technology is specifically tailored to minimize on-resistance, provides excellent switching performance, and withstands high energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies and half-bridge-based electronic lamp ballasts.