IXFT4N100Q

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IXFT4N100Q

Manufacturer part number:IXFT4N100Q

Manufacturer:IXYS

Description:Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXFT4N100Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	16A
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free