IRFP150A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRFP150A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
40MOhm
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
193W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
193W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
40m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2270pF @ 25V
Current - Continuous Drain (Id) @ 25°C
43A Tc
Gate Charge (Qg) (Max) @ Vgs
97nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
80 ns
Continuous Drain Current (ID)
43A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
740 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
450
$1.74133
$783.5985
IRFP150A Product Details
IRFP150A Description
IRFP150A belongs to the family of advanced power MOSFET designed based on rugged avalanche technology and rugged gate oxide technology. It is able to deliver lower input capacitance, improved gate charge, and extended safe operating area. These features make the IRFP150A more efficient and reliable and be used in a wide range of applications.