J111 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
J111 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
201mg
Manufacturer Package Identifier
TO-92 3L
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
35V
Max Power Dissipation
625mW
Current Rating
50mA
Base Part Number
J111
Element Configuration
Single
Power Dissipation
625mW
Power - Max
625mW
FET Type
N-Channel
Breakdown Voltage
-35V
Drain to Source Voltage (Vdss)
35V
Continuous Drain Current (ID)
20mA
Gate to Source Voltage (Vgs)
-35V
Drain to Source Resistance
30Ohm
Current - Drain (Idss) @ Vds (Vgs=0)
20mA @ 15V
Voltage - Cutoff (VGS off) @ Id
3V @ 1μA
Voltage - Breakdown (V(BR)GSS)
35V
Resistance - RDS(On)
30Ohms
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.52000
$0.52
10
$0.36600
$3.66
100
$0.24010
$24.01
500
$0.14186
$70.93
1,000
$0.10912
$0.10912
J111 Product Details
J111 Description
J111 is an N-channel silicon field-effect transistor that comes in TO-92 and SOT-23 packages. J111 is one of three transistors in the J11x series, which also contains J112 and J113. This class of transistors is primarily intended for analog switching, current limiting, choppers, commentators, and sample and hold applications.
J111 Features
TO-92 and SOT-23 packages are available.
N Channel JFET is a type of transistor (Symmetrical)
35V is the maximum drain-to-gate voltage.
50mA is the maximum continue gate current.
–5 to –3V is the maximum gate-to-source cutoff voltage.
625mW is the maximum power dissipation.
–35V is the maximum reverse gate to source voltage.
The maximum storage and operating temperatures should be between -55 and +150 °C.