KSA643CYTA Overview
DC current gain in this device equals 120 @ 100mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KSA643CYTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
KSA643CYTA Applications
There are a lot of ON Semiconductor KSA643CYTA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
