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KSA940H1TU

KSA940H1TU

KSA940H1TU

ON Semiconductor

KSA940H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA940H1TU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSA940
Power - Max 1.5W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 1.5A
Frequency - Transition 4MHz
KSA940H1TU Product Details

KSA940H1TU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 500mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 50mA, 500mA.This product comes in a TO-220-3 device package from the supplier.Device displays Collector Emitter Breakdown (150V maximal voltage).

KSA940H1TU Features


the DC current gain for this device is 40 @ 500mA 10V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the supplier device package of TO-220-3

KSA940H1TU Applications


There are a lot of ON Semiconductor KSA940H1TU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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