KSA940H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA940H1TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA940
Power - Max
1.5W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
1.5A
Frequency - Transition
4MHz
KSA940H1TU Product Details
KSA940H1TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 500mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 50mA, 500mA.This product comes in a TO-220-3 device package from the supplier.Device displays Collector Emitter Breakdown (150V maximal voltage).
KSA940H1TU Features
the DC current gain for this device is 40 @ 500mA 10V the vce saturation(Max) is 1.5V @ 50mA, 500mA the supplier device package of TO-220-3
KSA940H1TU Applications
There are a lot of ON Semiconductor KSA940H1TU applications of single BJT transistors.