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KSB1116SYTA

KSB1116SYTA

KSB1116SYTA

ON Semiconductor

KSB1116SYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB1116SYTA Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSB1116
Power - Max 750mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 120MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.05000 $0.05
500 $0.0495 $24.75
1000 $0.049 $49
1500 $0.0485 $72.75
2000 $0.048 $96
2500 $0.0475 $118.75
KSB1116SYTA Product Details

KSB1116SYTA Overview


DC current gain in this device equals 135 @ 100mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 1A.Supplier device package TO-92-3 comes with the product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.

KSB1116SYTA Features


the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the supplier device package of TO-92-3

KSB1116SYTA Applications


There are a lot of ON Semiconductor KSB1116SYTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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