MJD243T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 1V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.As you can see, the part has a transition frequency of 40MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.A maximum collector current of 4A volts is possible.
MJD243T4G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJD243T4G Applications
There are a lot of ON Semiconductor MJD243T4G applications of single BJT transistors.
- Inverter
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- Muting
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- Driver
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- Interface
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