KSB1121TTF Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of -350mV, it offers maximum design flexibility.When VCE saturation is 600mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -6V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Product package SOT-89-3 comes from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

KSB1121TTF Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
the supplier device package of SOT-89-3

KSB1121TTF Applications

There are a lot of ON Semiconductor KSB1121TTF applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting