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2SB1183TL

  • 2SB1183TL
  • 2SB1183TL

2SB1183TL

2SB1183TL

ROHM Semiconductor

2SB1183TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1183TL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating -2A
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1W
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.2mA, 600mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.722960 $10.72296
10 $10.116000 $101.16
100 $9.543396 $954.3396
500 $9.003204 $4501.602
1000 $8.493589 $8493.589
2SB1183TL Product Details

2SB1183TL Overview


DC current gain in this device equals 1000 @ 500mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.2mA, 600mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.As a result, the part has a transition frequency of 150MHz.Collector current can be as low as 2A volts at its maximum.

2SB1183TL Features


the DC current gain for this device is 1000 @ 500mA 2V
the vce saturation(Max) is 1.5V @ 1.2mA, 600mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 150MHz

2SB1183TL Applications


There are a lot of ROHM Semiconductor 2SB1183TL applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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