KSB546O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB546O Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Reach Compliance Code
compliant
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
25W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 400mA 10V
Current - Collector Cutoff (Max)
50μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
2A
Transition Frequency
5MHz
Frequency - Transition
5MHz
KSB546O Product Details
KSB546O Overview
In this device, the DC current gain is 70 @ 400mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A transition frequency of 5MHz is present in the part.There is a 150V maximal voltage in the device due to collector-emitter breakdown.
KSB546O Features
the DC current gain for this device is 70 @ 400mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA a transition frequency of 5MHz
KSB546O Applications
There are a lot of ON Semiconductor KSB546O applications of single BJT transistors.