KSB834O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB834O Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-60V
Max Power Dissipation
1.5W
Current Rating
-3A
Frequency
9MHz
Base Part Number
KSB834
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
1.5W
Power - Max
1.5W
Gain Bandwidth Product
9MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
9MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
-7V
hFE Min
60
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
KSB834O Product Details
KSB834O Overview
In this device, the DC current gain is 60 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor comes in a supplier device package of TO-220-3.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 3A volts.
KSB834O Features
the DC current gain for this device is 60 @ 500mA 5V the vce saturation(Max) is 1V @ 300mA, 3A the emitter base voltage is kept at -7V the current rating of this device is -3A the supplier device package of TO-220-3
KSB834O Applications
There are a lot of ON Semiconductor KSB834O applications of single BJT transistors.