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KSB834O

KSB834O

KSB834O

ON Semiconductor

KSB834O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB834O Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Max Power Dissipation 1.5W
Current Rating -3A
Frequency 9MHz
Base Part Number KSB834
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 1.5W
Power - Max 1.5W
Gain Bandwidth Product 9MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 9MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -7V
hFE Min 60
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
KSB834O Product Details

KSB834O Overview


In this device, the DC current gain is 60 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor comes in a supplier device package of TO-220-3.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 3A volts.

KSB834O Features


the DC current gain for this device is 60 @ 500mA 5V
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
the supplier device package of TO-220-3

KSB834O Applications


There are a lot of ON Semiconductor KSB834O applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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