MJE521 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE521 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
4A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MJE521
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 1V
Current - Collector Cutoff (Max)
100μA ICBO
Collector Emitter Breakdown Voltage
40V
Transition Frequency
10MHz
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4V
hFE Min
40
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.38661
$0.77322
MJE521 Product Details
MJE521 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 1V.Emitter base voltages of 4V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 400V volts.In extreme cases, the collector current can be as low as 4A volts.
MJE521 Features
the DC current gain for this device is 40 @ 1A 1V the emitter base voltage is kept at 4V the current rating of this device is 4A a transition frequency of 10MHz
MJE521 Applications
There are a lot of ON Semiconductor MJE521 applications of single BJT transistors.