KSC1008RBU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 50mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 8V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (700mA).Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.

KSC1008RBU Features

the DC current gain for this device is 40 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA

KSC1008RBU Applications

There are a lot of ON Semiconductor KSC1008RBU applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting