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KSC1173OTU

KSC1173OTU

KSC1173OTU

ON Semiconductor

KSC1173OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1173OTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 10W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 100MHz
KSC1173OTU Product Details

KSC1173OTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 30V maximal voltage - Collector Emitter Breakdown.

KSC1173OTU Features


the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 800mV @ 200mA, 2A

KSC1173OTU Applications


There are a lot of ON Semiconductor KSC1173OTU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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