KSC1173OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC1173OTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
10W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
100MHz
KSC1173OTU Product Details
KSC1173OTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 30V maximal voltage - Collector Emitter Breakdown.
KSC1173OTU Features
the DC current gain for this device is 70 @ 500mA 2V the vce saturation(Max) is 800mV @ 200mA, 2A
KSC1173OTU Applications
There are a lot of ON Semiconductor KSC1173OTU applications of single BJT transistors.