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NJVMJD31CT4G-VF01

NJVMJD31CT4G-VF01

NJVMJD31CT4G-VF01

ON Semiconductor

NJVMJD31CT4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD31CT4G-VF01 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MJD31
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.56W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 3A
Transition Frequency 3MHz
Frequency - Transition 3MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.22838 $0.45676
5,000 $0.21263 $1.06315
12,500 $0.21000 $2.52
NJVMJD31CT4G-VF01 Product Details

NJVMJD31CT4G-VF01 Overview


DC current gain in this device equals 25 @ 1A 4V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 3MHz.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

NJVMJD31CT4G-VF01 Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz

NJVMJD31CT4G-VF01 Applications


There are a lot of ON Semiconductor NJVMJD31CT4G-VF01 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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