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KSC1507R

KSC1507R

KSC1507R

ON Semiconductor

KSC1507R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1507R Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC1507
Power - Max 15W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 200μA
Frequency - Transition 80MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.561427 $1.561427
10 $1.473044 $14.73044
100 $1.389664 $138.9664
500 $1.311003 $655.5015
1000 $1.236796 $1236.796
KSC1507R Product Details

KSC1507R Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.

KSC1507R Features


the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA

KSC1507R Applications


There are a lot of ON Semiconductor KSC1507R applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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