KSC1507R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC1507R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC1507
Power - Max
15W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
200μA
Frequency - Transition
80MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.561427
$1.561427
10
$1.473044
$14.73044
100
$1.389664
$138.9664
500
$1.311003
$655.5015
1000
$1.236796
$1236.796
KSC1507R Product Details
KSC1507R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.
KSC1507R Features
the DC current gain for this device is 40 @ 10mA 10V the vce saturation(Max) is 2V @ 5mA, 50mA
KSC1507R Applications
There are a lot of ON Semiconductor KSC1507R applications of single BJT transistors.