KSC2073H2 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2073H2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSC2073
Power - Max
25W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
1.5A
Frequency - Transition
4MHz
KSC2073H2 Product Details
KSC2073H2 Overview
This device has a DC current gain of 40 @ 500mA 10V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Device displays Collector Emitter Breakdown (150V maximal voltage).
KSC2073H2 Features
the DC current gain for this device is 40 @ 500mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA
KSC2073H2 Applications
There are a lot of ON Semiconductor KSC2073H2 applications of single BJT transistors.