KSC2328AOTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.When VCE saturation is 2V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 120MHz is present in the part.Breakdown input voltage is 30V volts.During maximum operation, collector current can be as low as 2A volts.

KSC2328AOTA Features

the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 120MHz

KSC2328AOTA Applications

There are a lot of ON Semiconductor KSC2328AOTA applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter