KSC2334R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2334R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSC2334
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
7A
KSC2334R Product Details
KSC2334R Overview
In this device, the DC current gain is 40 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 100V maximal voltage - Collector Emitter Breakdown.
KSC2334R Features
the DC current gain for this device is 40 @ 3A 5V the vce saturation(Max) is 600mV @ 500mA, 5A
KSC2334R Applications
There are a lot of ON Semiconductor KSC2334R applications of single BJT transistors.