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KSC2334R

KSC2334R

KSC2334R

ON Semiconductor

KSC2334R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2334R Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number KSC2334
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 7A
KSC2334R Product Details

KSC2334R Overview


In this device, the DC current gain is 40 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 100V maximal voltage - Collector Emitter Breakdown.

KSC2334R Features


the DC current gain for this device is 40 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A

KSC2334R Applications


There are a lot of ON Semiconductor KSC2334R applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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