MJD127TF Overview

In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.Input voltage breakdown is available at 100V volts.A maximum collector current of 8A volts can be achieved.

MJD127TF Features

the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A

MJD127TF Applications

There are a lot of ON Semiconductor MJD127TF applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting