KSC5030FRTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC5030FRTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
800V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 600mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
800V
Collector Base Voltage (VCBO)
1.1kV
Emitter Base Voltage (VEBO)
7V
hFE Min
10
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.852623
$9.852623
10
$9.294928
$92.94928
100
$8.768800
$876.88
500
$8.272453
$4136.2265
1000
$7.804201
$7804.201
KSC5030FRTU Product Details
KSC5030FRTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 600mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.Maximum collector currents can be below 6A volts.
KSC5030FRTU Features
the DC current gain for this device is 10 @ 600mA 5V the vce saturation(Max) is 2V @ 600mA, 3A the emitter base voltage is kept at 7V
KSC5030FRTU Applications
There are a lot of ON Semiconductor KSC5030FRTU applications of single BJT transistors.