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KSC5030FRTU

KSC5030FRTU

KSC5030FRTU

ON Semiconductor

KSC5030FRTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC5030FRTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 60W
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 600mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 600mA, 3A
Collector Emitter Breakdown Voltage 800V
Collector Base Voltage (VCBO) 1.1kV
Emitter Base Voltage (VEBO) 7V
hFE Min 10
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.852623 $9.852623
10 $9.294928 $92.94928
100 $8.768800 $876.88
500 $8.272453 $4136.2265
1000 $7.804201 $7804.201
KSC5030FRTU Product Details

KSC5030FRTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 600mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.Maximum collector currents can be below 6A volts.

KSC5030FRTU Features


the DC current gain for this device is 10 @ 600mA 5V
the vce saturation(Max) is 2V @ 600mA, 3A
the emitter base voltage is kept at 7V

KSC5030FRTU Applications


There are a lot of ON Semiconductor KSC5030FRTU applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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