KSC5502DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 4 @ 1A 1V.The collector emitter saturation voltage is 310mV, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.11MHz is present in the transition frequency.As a result, it can handle voltages as low as 600V volts.When collector current reaches its maximum, it can reach 2A volts.
KSC5502DTM Features
the DC current gain for this device is 4 @ 1A 1V
a collector emitter saturation voltage of 310mV
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz
KSC5502DTM Applications
There are a lot of ON Semiconductor KSC5502DTM applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
