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2SB1260T100Q

2SB1260T100Q

2SB1260T100Q

ROHM Semiconductor

2SB1260T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1260T100Q Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1260
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 82
Continuous Collector Current -1A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.152520 $0.15252
10 $0.143887 $1.43887
100 $0.135742 $13.5742
500 $0.128059 $64.0295
1000 $0.120810 $120.81
2SB1260T100Q Product Details

2SB1260T100Q Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.As you can see, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 80V volts.The maximum collector current is 1A volts.

2SB1260T100Q Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz

2SB1260T100Q Applications


There are a lot of ROHM Semiconductor 2SB1260T100Q applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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