2SB1260T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.As you can see, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 80V volts.The maximum collector current is 1A volts.
2SB1260T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
2SB1260T100Q Applications
There are a lot of ROHM Semiconductor 2SB1260T100Q applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
