2SB1260T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1260T100Q Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1260
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
82
Continuous Collector Current
-1A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.152520
$0.15252
10
$0.143887
$1.43887
100
$0.135742
$13.5742
500
$0.128059
$64.0295
1000
$0.120810
$120.81
2SB1260T100Q Product Details
2SB1260T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.As you can see, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 80V volts.The maximum collector current is 1A volts.
2SB1260T100Q Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 400mV @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -1A a transition frequency of 100MHz
2SB1260T100Q Applications
There are a lot of ROHM Semiconductor 2SB1260T100Q applications of single BJT transistors.