KSD1616GTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 1A volts can be achieved.
KSD1616GTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
KSD1616GTA Applications
There are a lot of ON Semiconductor KSD1616GTA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
