2N5401BU Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor comes in a supplier device package of TO-92-3.The device has a 150V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 600mA volts is possible.

2N5401BU Features

the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
the supplier device package of TO-92-3

2N5401BU Applications

There are a lot of ON Semiconductor 2N5401BU applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting