KSD288Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD288Y Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD288
Power - Max
25W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
55V
Current - Collector (Ic) (Max)
3A
KSD288Y Product Details
KSD288Y Overview
In this device, the DC current gain is 120 @ 500mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100mA, 1A.There is no device package available from the supplier for this product.This device displays a 55V maximum voltage - Collector Emitter Breakdown.
KSD288Y Features
the DC current gain for this device is 120 @ 500mA 5V the vce saturation(Max) is 1V @ 100mA, 1A the supplier device package of TO-220-3
KSD288Y Applications
There are a lot of ON Semiconductor KSD288Y applications of single BJT transistors.