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KSD288Y

KSD288Y

KSD288Y

ON Semiconductor

KSD288Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD288Y Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Published 2000
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD288
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 55V
Current - Collector (Ic) (Max) 3A
In-Stock:4256 items

KSD288Y Product Details

KSD288Y Overview


In this device, the DC current gain is 120 @ 500mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100mA, 1A.There is no device package available from the supplier for this product.This device displays a 55V maximum voltage - Collector Emitter Breakdown.

KSD288Y Features


the DC current gain for this device is 120 @ 500mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-220-3

KSD288Y Applications


There are a lot of ON Semiconductor KSD288Y applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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