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KSD362N

KSD362N

KSD362N

ON Semiconductor

KSD362N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD362N Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 40W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 5V
Current - Collector Cutoff (Max) 20μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 70V
Current - Collector (Ic) (Max) 5A
Transition Frequency 10MHz
Frequency - Transition 10MHz
KSD362N Product Details

KSD362N Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 5A 5V.When VCE saturation is 1V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).10MHz is present in the transition frequency.Detection of Collector Emitter Breakdown at 70V maximal voltage is present.

KSD362N Features


the DC current gain for this device is 20 @ 5A 5V
the vce saturation(Max) is 1V @ 500mA, 5A
a transition frequency of 10MHz

KSD362N Applications


There are a lot of ON Semiconductor KSD362N applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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