KSD362N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD362N Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Reach Compliance Code
compliant
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
40W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 5V
Current - Collector Cutoff (Max)
20μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
70V
Current - Collector (Ic) (Max)
5A
Transition Frequency
10MHz
Frequency - Transition
10MHz
KSD362N Product Details
KSD362N Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 5A 5V.When VCE saturation is 1V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).10MHz is present in the transition frequency.Detection of Collector Emitter Breakdown at 70V maximal voltage is present.
KSD362N Features
the DC current gain for this device is 20 @ 5A 5V the vce saturation(Max) is 1V @ 500mA, 5A a transition frequency of 10MHz
KSD362N Applications
There are a lot of ON Semiconductor KSD362N applications of single BJT transistors.