KSD401O Overview
In this device, the DC current gain is 120 @ 400mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220-3 contains the product.Detection of Collector Emitter Breakdown at 150V maximal voltage is present.
KSD401O Features
the DC current gain for this device is 120 @ 400mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-220-3
KSD401O Applications
There are a lot of ON Semiconductor KSD401O applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
