BSP62E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BSP62E6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BSP62
Pin Count
4
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
200MHz
Frequency - Transition
200MHz
RoHS Status
RoHS Compliant
BSP62E6327HTSA1 Product Details
BSP62E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1mA, 1A.There is a transition frequency of 200MHz in the part.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BSP62E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V the vce saturation(Max) is 1.8V @ 1mA, 1A a transition frequency of 200MHz
BSP62E6327HTSA1 Applications
There are a lot of Infineon Technologies BSP62E6327HTSA1 applications of single BJT transistors.