KSD568OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD568OTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 3A 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
7A
KSD568OTU Product Details
KSD568OTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 3A 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
KSD568OTU Features
the DC current gain for this device is 60 @ 3A 1V the vce saturation(Max) is 500mV @ 500mA, 5A
KSD568OTU Applications
There are a lot of ON Semiconductor KSD568OTU applications of single BJT transistors.