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KSD568OTU

KSD568OTU

KSD568OTU

ON Semiconductor

KSD568OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD568OTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 3A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 7A
KSD568OTU Product Details

KSD568OTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 3A 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.

KSD568OTU Features


the DC current gain for this device is 60 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A

KSD568OTU Applications


There are a lot of ON Semiconductor KSD568OTU applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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