KSD568YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD568YTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 3A 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
7A
KSD568YTU Product Details
KSD568YTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 3A 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 500mA, 5A.Supplier package TO-220-3 contains the product.The device exhibits a collector-emitter breakdown at 60V.
KSD568YTU Features
the DC current gain for this device is 100 @ 3A 1V the vce saturation(Max) is 500mV @ 500mA, 5A the supplier device package of TO-220-3
KSD568YTU Applications
There are a lot of ON Semiconductor KSD568YTU applications of single BJT transistors.