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KSD568YTU

KSD568YTU

KSD568YTU

ON Semiconductor

KSD568YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD568YTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 3A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 7A
KSD568YTU Product Details

KSD568YTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 3A 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 500mA, 5A.Supplier package TO-220-3 contains the product.The device exhibits a collector-emitter breakdown at 60V.

KSD568YTU Features


the DC current gain for this device is 100 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3

KSD568YTU Applications


There are a lot of ON Semiconductor KSD568YTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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