KSE13003H2AS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSE13003H2AS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KSE13003
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
20W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic
3V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
4MHz
Frequency - Transition
4MHz
Power Dissipation-Max (Abs)
20W
KSE13003H2AS Product Details
KSE13003H2AS Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 500mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 500mA, 1.5A.A transition frequency of 4MHz is present in the part.This device displays a 400V maximum voltage - Collector Emitter Breakdown.
KSE13003H2AS Features
the DC current gain for this device is 14 @ 500mA 2V the vce saturation(Max) is 3V @ 500mA, 1.5A a transition frequency of 4MHz
KSE13003H2AS Applications
There are a lot of ON Semiconductor KSE13003H2AS applications of single BJT transistors.