KSE13003H2AS Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 500mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 500mA, 1.5A.A transition frequency of 4MHz is present in the part.This device displays a 400V maximum voltage - Collector Emitter Breakdown.
KSE13003H2AS Features
the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
a transition frequency of 4MHz
KSE13003H2AS Applications
There are a lot of ON Semiconductor KSE13003H2AS applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver