KSC1008CYBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC1008CYBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
800mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
700mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
KSC1008CYBU Product Details
KSC1008CYBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 500mA.As you can see, the part has a transition frequency of 50MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
KSC1008CYBU Features
the DC current gain for this device is 120 @ 50mA 2V the vce saturation(Max) is 400mV @ 50mA, 500mA a transition frequency of 50MHz
KSC1008CYBU Applications
There are a lot of Rochester Electronics, LLC KSC1008CYBU applications of single BJT transistors.