KSH127TM Overview
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 80mA, 8A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-8A).There is a breakdown input voltage of 100V volts that it can take.In extreme cases, the collector current can be as low as 8A volts.
KSH127TM Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
KSH127TM Applications
There are a lot of ON Semiconductor KSH127TM applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
